The Aporia
Feng, C. (2026, October 12). China’s CXMT unveils ‘key progress’ on chip structure pursued by Samsung, SK Hynix. South China Morning Post. https://www.scmp.com/tech/big-tech/article/3370505/chinas-cxmt-unveils-key-progress-chip-structure-pursued-samsung-sk-hynix?utm_source=rss_feed
Feng, Coco. “China’s CXMT unveils ‘key progress’ on chip structure pursued by Samsung, SK Hynix.” South China Morning Post, 12 Oct. 2026, https://www.scmp.com/tech/big-tech/article/3370505/chinas-cxmt-unveils-key-progress-chip-structure-pursued-samsung-sk-hynix?utm_source=rss_feed.
Feng, Coco. “China’s CXMT unveils ‘key progress’ on chip structure pursued by Samsung, SK Hynix.” South China Morning Post, October 12, 2026. https://www.scmp.com/tech/big-tech/article/3370505/chinas-cxmt-unveils-key-progress-chip-structure-pursued-samsung-sk-hynix?utm_source=rss_feed.
Dated when The Aporia collected the article, usually within hours of publication. Check the original for its exact date and byline.
At an industrial event in Shanghai over the weekend, CXMT, a Chinese memory chip giant, announced significant progress on a new chip design that could rival technologies developed by Samsung and SK Hynix. CXMT’s president Cao Kanyu revealed plans to introduce a server-memory product using their proprietary “4F square” transistor design by the end of 2026, which promises higher storage density and improved efficiency compared to existing mainstream commercial DRAM that uses a 6F square-cell structure. This breakthrough could potentially increase chip storage capacity while reducing production costs, giving CXMT an edge in the competitive semiconductor market.